std4na40 n - channel enhancement mode fast power mos transistor n typical r ds(on) = 1.7 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n application oriented characterization n through-hole ipak (to-251) power package in tube (suffix "-1") n surface-mounting dpak (to-252) power package in tape & reel (suffix "t4") applications n high speed switching n uninterruptible power supply (ups) n motor control, audio amplifiers n industrial actuators n dc-dc & dc-ac converters for telecom, industrial and consumer environment n particularly suitable for electronic fluorescent lamp ballasts internal schematic diagram type v dss r ds(on) i d std4na40 400 v < 2 w 3.3 a november 1996 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 400 v v dgr drain- gate voltage (r gs = 20 k w )400v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c3.3a i d drain current (continuous) at t c = 100 o c2.1a i dm ( ) drain current (pulsed) 13.2 a p tot total dissipation at t c = 25 o c50w derating factor 0.4 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area 1 3 2 ipak to-251 (suffix "-1") 1 3 dpak to-252 (suffix "t4") 1/10
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 2.5 100 1.5 275 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 3.3 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 60 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 2.5 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 2.1 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 400 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 25 250 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10v i d = 2 a 1.7 2 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 4a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 2 a 1.0 2.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 375 70 18 490 90 25 pf pf pf std4na40 2/10
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 200 v i d = 2 a r g = 18 w v gs = 10 v (see test circuit, figure 3) 13 22 20 30 ns ns (di/dt) on turn-on current slope v dd = 320 v i d = 4 a r g = 18 w v gs = 10 v (see test circuit, figure 5) 385 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 320 v i d = 4 a v gs = 10 v 20 5 8 28 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 320 v i d = 4 a r g = 18 w v gs = 10 v (see test circuit, figure 5) 12 9 21 18 14 30 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 4 16 a a v sd ( * ) forward on voltage i sd = 4 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 355 4.3 24 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance std4na40 3/10
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage std4na40 4/10
capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature turn-on current slope cross-over time turn-off drain-source voltage slope std4na40 5/10
fig. 1: unclamped inductive load test circuits fig. 2: unclamped inductive waveforms switching safe operating area accidental overload area source-drain diode forward characteristics std4na40 6/10
fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 3: switching times test circuits for resistive load std4na40 7/10
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 d a c2 c l a3 l2 l1 1 3 h = = b3 b b6 b2 e g a1 = = = = b5 2 to-251 (ipak) mechanical data 0068771-e std4na40 8/10
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 a c2 c h a1 a2 == d l2 l4 1 3 == b e == b2 g 2 detail "a" detail "a" to-252 (dpak) mechanical data 0068772-b std4na40 9/10
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the n etherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . std4na40 10/10
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